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[1] GM Hegazi, A Jelenski, and KS Yngvesson. “Limitations of microwave and millimeter- wave mixers due to excess noise”. In: IEEE Transactions on Microwave Theory and Techniques 33.12 (1985), pp. 1404–1409.

[2] J. Gross, H. Hung, and G. Hegazi. “Time-Domain Analysis of C-Band Class AB Feedback Power FET Amplifier”. In: Comsat Technical Note, CSC 1328 5.80 (1986).

[3] G Hegazi, H-L Hung, F Phelleps, L Holdeman, A Cornfeld, et al. “V-band monolithic power MESFET amplifiers”. In: Microwave Symposium Digest, 1988., IEEE MTT-S International. IEEE. 1988, pp. 409–412.

[4] Hing-Loi Hung, Gamal M Hegazi, Timothy T Lee, Fred R Phelleps, Jack L Singer, et al. “V-band GaAs MMIC low-noise and power amplifiers”. In: IEEE Transactions on Microwave Theory and Techniques 36.12 (1988), pp. 1966–1975.

[5] H-L Hung and G. Hegazi et al. “Design and Performance of GaAs Power FET Am- plifiers at K- and Ka-Band”. In: Microwave Journal 31.6 (June 1989).

[6] G Hegazi, H-LA Hung, JL Singer, FR Phelleps, AB Cornfeld, et al. “GaAs molecu- lar beam epitaxy monolithic power amplifiers at U-band”. In: Microwave Symposium Digest, 1989., IEEE MTT-S International. IEEE. 1989, pp. 209–213.

[7] Thomas Ho, F. Phelleps, G. Hegazi, Krishna Pande, H Haung, et al. “A monolithic mm-wave GaAs FET power amplifier for 35 GHz seeker applications”. In: Microwave Journal 33.8 (1990), pp. 113–119.

[8] HL Hung, A Zaghloul, J Singer, G Hegazi, F Phelleps, et al. “Monolithic integrated circuits for millimeter-wave phased-array applications”. In: Antennas and Propagation Society International Symposium, 1990. AP-S. Merging Technologies for the 90’s. Di- gest. IEEE. 1990, pp. 1409–1412.

[9] G Hegazi, A Ezzeddine, F Phelleps, P McNally, K Pande, et al. “W-band monolithic frequency doubler using vertical GaAs varactor diode with n/sup+/buried layer”. In: Electronics letters 27.3 (1991), pp. 213–214.

[10] G Hegazi, K Pande, F Phelleps, E Chang, A Cornfeld, et al. “A 0.5-watt 47-GHz power amplifier using GaAs monolithic circuits”. In: IEEE microwave and guided wave letters 2.2 (1992), pp. 61–62.SELECTED PUBLICATIONS 5

[11] Weiqi Li, Gamal M Hegazi, Timothy T Lee, and Fred Phelleps. “High-performance 38-GHz PHEMT power amplifier MMIC for commercial millimeter wave radio sys- tems”. In: SPIE’s 1996 International Symposium on Optical Science, Engineering, and Instrumentation. International Society for Optics and Photonics. 1996, pp. 40–45.

[12] T. Lee, L. Phelps, J. Singer, and G. Hegazi et al. “Millimeter-Wave P-HEMT Low- Noise and Power MMIC Amplifiers for the Commercial Market”. In: North American Science Meeting, Commission D (July 1997).

[13] G. Hegazi and Steve Arneson. “Mixed Signal Simulation Tool for Optimization of a Digital Image Rejection Receiver”. In: Motorola Simulation and Modeling Symposium (May 2000).

[14] G. Hegazi and Colin McAndrew. “MSTAT – Motorola STatistical Analysis Tool”. In: Analog-Mixed Signal Technology Center Newsletter (Feb. 2001).

[15] G. Hegazi. “Statistical Simulation in Cadences Analog Artist Using MSTAT”. In: Arizona Technical Conference (Nov. 2002).

[16] Gamal M Hegazi, Thanh T Chu, and Richard A Groshong. “Improved LINC power transmission using a quadrature outphasing technique”. In: Microwave Symposium Digest, 2005 IEEE MTT-S International. IEEE. 2005, 4–pp.

[17] Song Lin, Aly Fathy, Gamal M Hegazi, and Thanh T Chu. “Modeling and Imple- mentation of a Novel Coaxial Line Multi-Octave High Power Combiners with Low Inter-Modulation Distortion”. In: Microwave Symposium, 2007. IEEE/MTT-S Inter- national. IEEE. 2007, pp. 435–438.

[18] R Negra, TD Chu, M Helaoui, S Boumaiza, GM Hegazi, et al. “Switch-based GaN HEMT model suitable for highly-efficient RF power amplifier design”. In: Microwave Symposium, 2007. IEEE/MTT-S International. IEEE. 2007, pp. 795–798.

[19] G. Hegazi et al. “Wideband VHF/UHF Quadrature LINC Power Amplifier System”. In: GOMACTech conference (Mar. 2007).

[20] Gamal Hegazi, Thanh Chu, Scott Heibel, Jake Jordan, and Haluk Sasmazer. “Linear wideband VHF/UHF quad LINC transmitter system”. In: Military Communications Conference, 2007. MILCOM 2007. IEEE. IEEE. 2007, pp. 1–6.

[21] Mark Yu, Robert J Ward, Donald H Hovda, Gamal M Hegazi, Allen W Hanson, et al. “The development of a high power SP4T RF switch in GaN HFET technology”. In: IEEE microwave and wireless components letters 17.12 (2007), pp. 894–896.

[22] Mark Yu, Robert J Ward, and Gamal M Hegazi. “High power RF switch MMICs development in GaN-on-Si HFET technology”. In: Radio and Wireless Symposium, 2008 IEEE. IEEE. 2008, pp. 855–858.

[23] Song Lin, Aly Fathy, Gamal M Hegazi, and Thanh T Chu. “Multi-octave high power recycling combiner using coaxial line to improve overall efficiency of outphasing power amplifier”. In: Radio and Wireless Symposium, 2008 IEEE. IEEE. 2008, pp. 747–750.

[24] Song Lin, Aly E Fathy, Gamal M Hegazi, and Thanh T Chu. “Circuit and EM mod- eling of wideband high power VHF/UHF combiners”. In: International Journal of RF and Microwave Computer-Aided Engineering 19.4 (2009), pp. 481–491.

[25] W. Sorsby and G. Hegazi. “Partial Envelope Tracking Technique for Efficient RF Linear Power Amplification”. In: Radio and Wireless Symposium, 2010 IEEE. IEEE. 2010, pp. 104–107.

[26] Scott R Velazquez and Gamal M Hegazi. “1 GHz instantaneous bandwidth digital pre- distortion for multi-concurrent channel wideband power amplifiers”. In: Microwave Symposium (IMS), 2015 IEEE MTT-S International. IEEE. 2015, pp. 1–4.

[27] Robab Kazemi, Gamal Hegazi, and Aly E Fathy. “X-band all-waveguide radial com- biner for high power applications”. In: Microwave Symposium (IMS), 2015 IEEE MTT-S International. IEEE. 2015, pp. 1–4.